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SDM10K45 A7303 KSH122I THN5601B 74HC4050 TLE4263 NNCD24DA BG103
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 30 25 20
4V 10V 4.5V 3.5V
20 Vds=5V
16
15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 26 24
Id (A)
Id (A)
12 125C 8
13.4
4
25C
16 26
22
0 1.5 2 2.5
0.76 3
3.5
4
Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=10V
Normalized On-Resistance
Vgs=4.5V
Id=8.5A 1.4 Vgs=4.5V 1.2
Rds(on) (m:)
22 20 18 16 Vgs=10V 14 12 10 0 5 10 15 20
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
1.0E+01 1.0E+00
40
Rds(on) (m:)
Id=8.5A
1.0E-01
Is (A)
125C 1.0E-02 25C 1.0E-03
30
125C
20 25C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vds=15V Id=8.5A
1500 1250
Capacitance (pF)
Ciss 1000 750 500 250 0 Crss 0 5 10
Vgs (Volts)
6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics
Coss
13.4 22
15 0.76 20
16 26
25 30
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100Ps 10Ps
50 40 Tj(max)=150C Ta=25C
Id (Amps)
Power (W)
30 20 10 0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=T on/T Tj,pk=T a+Pdm.ZTja.RTja RTja=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse T 0.01 0.1 1 10 100 1000
0.01 0.00001
0.0001
0.001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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